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EFFECT OF PROCESSING CONDITIONS ON THE NUCLEATION AND GROWTH OF INDIUM-TIN-OXIDE NANOWIRES MADE BY PULSED LASER ABLATION
Ano de Publicação:	2007
Veículo de Publicação:	Journa of Materials Science
Nível:	Não aplicável
Inserida no sistema em:	16/03/2007
Palavras Chave:	ITO, pulsed laser ablation, nanowires, VLS growth mechanism, nucleation.
Resumo:	Indium–tin oxide nanowires were deposited by excimer laser ablation onto catalyst-free oxidized silicon substrates at a low temperature of 500 ºC in a nitrogen atmosphere. The nanowires have branches with spheres at the tips, indicating a vapor–liquid–solid (VLS) growth. The deposition time and pressure have a strong influence on the areal density and length of the nanowires. At the earlier stages of growth, lower pressures promote a larger number of nucleation centers. With the increase in deposition time, both the number and length of the wires increase up to an areal density of about 70 wires/m2. After this point all the material arriving at the substrate is used for lengthening the existing wires and their branches. The nanowires present the single-crystalline cubic bixbyite structure of indium oxide, oriented in the <100> direction. These structures have potential applications in electrical and optical nanoscale devices.

Autores da Publicação
Autor Principal	Raluca Savu
	Savu, Raluca
Autor 2	Ednan Joanni
	Joanni, Ednan

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